荷兰专利NL2004297A Improving alignment target contrast in a lithographic double patterning process.

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公开号:NL2004297A
申请号:NL2004297
申请日:2010-02-25
公开日:2010-09-21
发明作者:Harry Sewell；Mircea Dusa；Richard Haren；Manfred Tenner；Maya Doytcheva
申请人:Asml Holding Nv；
IPC主号:

专利说明:

IMPROVING ALIGNMENT TARGET CONTRAST IN A LITHOGRAPHICDOUBLE PATTERNING PROCESS
BACKGROUND OF THE INVENTION
Field of the Invention
[0001] The present invention relates generally to lithography, and more particularly toimproving alignment targets in lithographic patterning processes, such as a doublepatterning process.
Related Art
[0002] A lithographic apparatus is a machine that applies a desired pattern onto asubstrate, usually onto a target portion of the substrate. A lithographic apparatus canbe used, for example, in the manufacture of integrated circuits (ICs). In that instance,a patterning device, which is alternatively referred to as a mask or a reticle, may beused to generate a circuit pattern to be formed on an individual layer of the IC. Thispattern can be transferred onto a target portion (e.g., including part of, one, or severaldies) on a substrate (e.g., a silicon wafer). Transfer of the pattern is typically viaimaging onto a layer of radiation-sensitive material (resist) provided on the substrate.In general, a single substrate will contain a network of adjacent target portions that aresuccessively patterned. Known lithographic apparatus include so-called steppers, inwhich each target portion is irradiated by exposing an entire pattern onto the targetportion at one time, and so-called scanners, in which each target portion is irradiatedby scanning the pattern through a radiation beam in a given direction (the "scanning"-direction, also referred to as the "y-direction") while synchronously scanning thesubstrate parallel or anti-parallel to this direction. It is also possible to transfer thepattern from the patterning device to the substrate by imprinting the pattern onto thesubstrate.
[0003] The resolution of optical lithography can be increased by using doublepatterning. Double patterning generally involves two sets of patterns. The second setmust be accurately aligned with the first set. In some cases, the two sets of patternsare aligned interstitially. Aligning these two sets poses a major challenge, especiallyas the semiconductor industry's demands pose increasing resolution and tighteroverlay requirements.
BRIEF SUMMARY OF THE INVENTION
[0004] Embodiments of the present invention generally relate to improving alignmentmark contrast in lithographic patterning processes such as a double patterning process.
[0005] In one embodiment of the present invention, a method of manufacturing asemiconductor device using lithography is provided. The method includes coating asubstrate with a first radiation sensitive-layer and adding a dye compound to the firstradiation-sensitive layer. The method further includes exposing and developing thefirst radiation-sensitive layer to form a first lithography pattern, coating the firstlithography pattern with a second radiation-sensitive layer, detecting the location ofthe first lithography pattern, aligning the substrate with the detected location of thefirst lithography pattern, and exposing and developing the second radiation-sensitivelayer to form a second lithography pattern. The method aligns the second lithographypattern with the detected location of the first lithography pattern. In one exemplaryimplementation, the dye compound and the first lithography pattern form a diffractiongrating, diffraction array, alignment array, or other pattern for alignment.
[0006] In another embodiment of the present invention, a method includes coating asubstrate with a first radiation sensitive-layer, exposing and developing the firstradiation-sensitive layer to form a first lithography pattern, and coating the firstlithography pattern with a second radiation-sensitive layer. The method furtherincludes adding a dye compound to the second radiation-sensitive layer, detecting thelocation of the first lithography pattern, aligning the substrate with the detectedlocation of the first lithography pattern, and exposing and developing the secondradiation-sensitive layer to form a second lithography pattern. The method includesaligns the second lithography pattern with the detected location of the first lithographypattern. In one exemplary implementation, the dye compound and the secondlithography pattern form a diffraction grating, diffraction array, alignment array, orother pattern for alignment.
[0007] The present invention also relates to an article of manufacture including: asubstrate coated with a first radiation-sensitive layer; a first lithography patternformed in the first radiation-sensitive layer; and a second radiation-sensitive layercoating the first radiation-sensitive layer. Either the first lithography pattern or thesecond radiation-sensitive layer includes a dye compound. The dye compoundcooperates with either the first lithography pattern or the second radiation-sensitivelayer to form a diffraction grating, diffraction array, alignment array, or other pattern for alignment. In one exemplary implementation, the article of manufacture furtherincludes a second lithography pattern directly aligned to the first lithography patternusing the diffraction grating, diffraction array, alignment array, or other pattern foralignment.
[0008] The present invention also relates to a system for manufacturing asemiconductor device lithographically. The system includes an illumination source toprovide an alignment beam at a specified wavelength for reading an alignment markin a double patterning process. The system also includes an alignment system todetect a dye compound in one of a first radiation-sensitive layer coated on a substrateor in a second radiation-sensitive layer coated on a first lithography pattern in thedouble patterning process. The dye compound provides a desired contrast betweenthe first lithography pattern and the second radiation-sensitive layer when aligningtwo patterning steps of the double patterning process based on the alignment markformed in the first lithography pattern.
BRIEF DESCRIPTION OF THE DRAWINGS/FIGURES
[0009] The above summary sets forth many, but not all aspects of the invention.Other aspects of the invention should be apparent to those skilled in the art to whichthe invention pertains by reading the descriptions of various "embodiments" of theinvention in conjunction with reference to the drawings. In setting forth the followingembodiments, the present invention is illustrated by way of example, and not by wayof limitation. In the figures, like reference numerals refer to similar elements.
[0010] FIGS. 1A and IB respectively depict reflective and transmissive lithographicapparatuses, according to one embodiment of the present invention;
[0011] FIG. 2 schematically shows a lithographic cell, according to one embodimentof the present invention;
[0012] FIGs. 3-6 schematically show steps in a spacer double patterning process,according to one embodiment of the present invention;
[0013] FIG. 7 schematically shows a SEM profile in polysilicon resulting from aspacer double patterning process, according to one embodiment of the presentinvention;
[0014] FIGs. 8-11 schematically show steps in a Litho Etch Litho Etch (LELE)double patterning process, according to one embodiment of the present invention;
[0015] FIG. 12 schematically shows a SEM profile in polysilicon resulting from aLELE double patterning process, according to one embodiment of the presentinvention;
[0016] FIGs. 13-16 schematically show steps in a Litho Freeze Litho Etch (LFLE)double patterning process, according to one embodiment of the present invention;
[0017] FIG. 17 schematically shows a SEM profile in polysilicon resulting from aLFLE double patterning process, according to one embodiment of the presentinvention;
[0018] FIG. 18 schematically shows an alignment beam incident on a doublepatterning stack, according to one embodiment of the present invention;
[0019] FIG. 19 schematically shows an alignment beam incident on a doublepatterning stack augmented with dye, according to one embodiment of the presentinvention;
[0020] FIG. 20 schematically shows an exemplary transmission spectrum forphotoresist augmented with colored dyes, according to one embodiment of the presentinvention;
[0021] FIG. 21 schematically shows the molar extinction coefficient spectrum forMerocyanine 540, according to one embodiment of the present invention;
[0022] FIG. 22 schematically shows the molar extinction coefficient spectrum forThiatricarbocyanine (C7) dye, according to one embodiment of the present invention;
[0023] FIG. 23 schematically shows a flow chart depicting an embodiment of amethod of manufacturing according to the present invention;
[0024] FIG. 24 schematically shows a flow chart depicting another embodiment of amethod of manufacturing according to the present invention; and
[0025] FIG. 25 schematically shows a block diagram of a system for manufacturing,according to one embodiment of the present invention.
DETAILED DESCRIPTION OF THE INVENTION
[0026] The present invention will now be described in detail with reference to a fewpreferred embodiments thereof as illustrated in the accompanying drawings. In thefollowing description, numerous specific details are set forth in order to provide athorough understanding of the present invention. It will be apparent, however, to oneskilled in the art, that the present invention may be practiced without some or all of these specific details. In other instances, well known process steps have not beendescribed in detail in order not to unnecessarily obscure the present invention.
[0027] Likewise, the drawings showing embodiments of the system are semi- diagrammatic and schematic and are not drawn to scale. Some of the dimensions areexaggerated for the clarity of presentation.
[00281 Apparatus illustrated can be operated in orientations other than as illustrated.In addition, where multiple embodiments are disclosed and described having somefeatures in common, for clarity and ease of illustration, description, andcomprehension thereof, similar and like features one to another will ordinarily bedescribed with like reference numerals.
[0029] FIGS. 1A and IB schematically depict lithographic apparatus 100 andlithographic apparatus 100’, respectively, consistent with embodiments of the presentinvention. Lithographic apparatus 100 and lithographic apparatus 100’ each include:an illumination system (illuminator) IL configured to condition a radiation beam B(e.g., DUV or EUV radiation); a support structure (e.g., a mask table) MT configuredto support a patterning device (e.g., a mask, a reticle, or a dynamic patterning device)MA and connected to a first positioner PM configured to accurately position thepatterning device MA; and a substrate table (e.g., a wafer table) WT configured tohold a substrate (e.g., a resist coated wafer) W and connected to a second positionerPW configured to accurately position the substrate W. Lithographic apparatuses 100and 100’ also have a projection system PS configured to project a pattern imparted tothe radiation beam B by patterning device MA onto a target portion (e.g., comprisingone or more dies) C of the substrate W. In lithographic apparatus 100 the patterningdevice MA and the projection system PS is reflective, and in lithographic apparatus100’ the patterning device MA and the projection system PS is transmissive.
[0030] The illumination system IL may include various types of optical components,such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types ofoptical components, or any combination thereof, for directing, shaping, or controllingthe radiation B.
[0031] The support structure MT holds the patterning device MA in a manner thatdepends on the orientation of the patterning device MA, the design of the lithographicapparatuses 100 and 100’, and other conditions, such as for example whether or notthe patterning device MA is held in a vacuum environment. The support structureMT may use mechanical, vacuum, electrostatic or other clamping techniques to hold the patterning device MA. The support structure MT may be a frame or a table, forexample, which may be fixed or movable, as required. The support structure MT mayensure that the patterning device is at a desired position, for example with respect tothe projection system PS.
[0032] The term “patterning device” MA should be broadly interpreted as referring toany device that may be used to impart a radiation beam B with a pattern in its cross-section, such as to create a pattern in the target portion C of the substrate W. Thepattern imparted to the radiation beam B may correspond to a particular functionallayer in a device being created in the target portion C, such as an integrated circuit.
[0033] The patterning device MA may be transmissive (as in lithographic apparatus100’ of FIG. IB) or reflective (as in lithographic apparatus 100 of FIG. 1A).Examples of patterning devices MA include reticles, masks, programmable mirrorarrays, and programmable LCD panels. Masks are well known in lithography, andinclude mask types such as binary, alternating phase shift, and attenuated phase shift,as well as various hybrid mask types. An example of a programmable mirror arrayemploys a matrix arrangement of small mirrors, each of which may be individuallytilted so as to reflect an incoming radiation beam in different directions. The tiltedmirrors impart a pattern in the radiation beam B which is reflected by the mirrormatrix.
[0034] The term “projection system” PS may encompass any type of projectionsystem, including refractive, reflective, catadioptric, magnetic, electromagnetic andelectrostatic optical systems, or any combination thereof, as appropriate for theexposure radiation being used, or for other factors, such as the use of an immersionliquid or the use of a vacuum. A vacuum environment may be used for EUV orelectron beam radiation since other gases may absorb too much radiation or electrons.A vacuum environment may therefore be provided to the whole beam path with theaid of a vacuum wall and vacuum pumps.
[0035] Lithographic apparatus 100 and/or lithographic apparatus 100’ may be of atype having two (dual stage) or more substrate tables (and/or two or more masktables) WT. In such “multiple stage” machines the additional substrate tables WTmay be used in parallel, or preparatory steps may be carried out on one or more tableswhile one or more other substrate tables WT are being used for exposure.
[0036] Illuminator IL receives a radiation beam from a radiation source SO. Thesource SO and the lithographic apparatuses 100, 100’ may be separate entities, for example when the source SO is an excimer laser. In such cases, the source SO is notconsidered to form part of the lithographic apparatuses 100 or 100’, and the radiationbeam B passes from the source SO to the illuminator TL with the aid of a beamdelivery system BD (FIG. IB) comprising, for example, suitable directing mirrorsand/or a beam expander. In other cases, the source SO may be an integral part of thelithographic apparatuses 100,100’ — for example when the source SO is a mercurylamp. The source SO and the illuminator IL, together with the beam delivery systemBD, if required, may be referred to as a radiation system.
10037J The illuminator IL may comprise an adjuster AD (FIG. IB) for adjusting the angular intensity distribution of the radiation beam. Generally, at least the outerand/or inner radial extent (commonly referred to as σ-outer and σ-inner, respectively)of the intensity distribution in a pupil plane of the illuminator may be adjusted. Inaddition, the illuminator IL may comprise various other components (FIG. IB), suchas an integrator IN and a condenser CO. The illuminator TL may be used to conditionthe radiation beam B, to have a desired uniformity and intensity distribution in itscross section.
[0038] Referring to FIG. 1A, the radiation beam B is incident on the patterning device(e.g., mask) MA, which is held on the support structure (e.g., mask table) MT, and ispatterned by the patterning device MA. In lithographic apparatus 100, the radiationbeam B is reflected from the patterning device (e.g., mask) MA. After being reflectedfrom the patterning device (e.g., mask) MA, the radiation beam B passes through theprojection system PS, which focuses the radiation beam B onto a target portion C ofthe substrate W. With the aid of the second positioner PW and position sensor IF2(e.g., an interferometric device, linear encoder or capacitive sensor), the substratetable WT may be moved accurately, e.g., so as to position different target portions Cin the path of the radiation beam B. Similarly, the first positioner PM and anotherposition sensor IF1 may be used to accurately position the patterning device (e.g.,mask) MA with respect to the path of the radiation beam B. Patterning device (e.g.,mask) MA and substrate W may be aligned using mask alignment marks Ml, M2 andsubstrate alignment marks PI, P2.
[0039] Referring to FIG. IB, the radiation beam B is incident on the patterning device(e.g., mask MA), which is held on the support structure (e.g., mask table MT), and ispatterned by the patterning device. Having traversed the mask MA, the radiation beam B passes through the projection system PS, which focuses the beam onto a targetportion C of the substrate W. With the aid of the second positioner PW and positionsensor IF (e.g., an interferometric device, linear encoder or capacitive sensor), thesubstrate table WT can be moved accurately, e.g., so as to position different targetportions C in the path of the radiation beam B. Similarly, the first positioner PM andanother position sensor (which is not explicitly depicted in FIG. IB) can be used toaccurately position the mask MA with respect to the path of the radiation beam B,e.g., after mechanical retrieval from a mask library, or during a scan.
[0040] In general, movement of the mask table MT may be realized with the aid of along-stroke module (coarse positioning) and a short-stroke module (fine positioning),which form part of the first positioner PM. Similarly, movement of the substrate tableWT may be realized using a long-stroke module and a short-stroke module, whichform part of the second positioner PW. In the case of a stepper (as opposed to ascanner) the mask table MT may be connected to a short-stroke actuator only, or maybe fixed. Mask MA and substrate W may be aligned using mask alignment marksMl, M2 and substrate alignment marks PI, P2. Although the substrate alignmentmarks as illustrated occupy dedicated target portions, they may be located in spacesbetween target portions (known as scribe-lane alignment marks). Similarly, insituations in which more than one die is provided on the mask MA, the maskalignment marks may be located between the dies.
[0041] The lithographic apparatuses 100 and 100’ may be used in at least one of thefollowing modes: 1. In step mode, the support structure (e.g., mask table) MT and thesubstrate table WT are kept essentially stationary, while an entire pattern imparted tothe radiation beam B is projected onto a target portion C at one time (i.e., a singlestatic exposure). The substrate table WT is then shifted in the X and/or Y direction sothat a different target portion C may be exposed.
2. In scan mode, the support structure (e.g., mask table) MT and thesubstrate table WT are scanned synchronously while a pattern imparted to theradiation beam B is projected onto a target portion C (i.e., a single dynamic exposure).The velocity and direction of the substrate table WT relative to the support structure(e.g., mask table) MT may be determined by the (de-)magnification and imagereversal characteristics of the projection system PS.
3. In another mode, the support structure (e.g., mask table) MT is keptsubstantially stationary holding a programmable patterning device, and the substratetable WT is moved or scanned while a pattern imparted to the radiation beam B isprojected onto a target portion C. A pulsed radiation source SO may be employed andthe programmable patterning device is updated as required after each movement ofthe substrate table WT or in between successive radiation pulses during a scan. Thismode of operation may be readily applied to maskless lithography that utilizesprogrammable patterning device, such as a programmable mirror array of a type asreferred to herein.
[0042] Combinations and/or variations on the described modes of use or entirelydifferent modes of use may also be employed.
[0043] In a further embodiment, lithographic apparatus 100 includes an extremeultraviolet (EUV) source, which is configured to generate a beam of EUV radiationfor EUV lithography. In general, the EUV source is configured in a radiation system,and a corresponding illumination system is configured to condition the EUV radiationbeam of the EUV source.
[0044] Combinations and/or variations on the above described modes of use orentirely different modes of use may also be employed.
[0045] Consistent with one embodiment of the present invention, as shown in Figure2, the lithographic apparatus LA forms part of a lithographic cell LC, sometimesreferred to a lithocell or cluster, which also includes apparatus to perform pre- andpost-exposure processes on a substrate. In one example, a lithocell or cluster mayinclude spin coaters SC to deposit resist layers, developers DE to develop exposedresist, chill plates CH and bake plates BK. A substrate handler, or robot, RO picks upsubstrates from input/output ports I/Ol, 1/02, moves them between the differentprocess apparatus and delivers then to the loading bay LB of the lithographicapparatus. These devices, which are often collectively referred to as the track, areunder the control of a track control unit TCU, which is itself controlled by thesupervisory control system SCS, which also controls the lithographic apparatus vialithography control unit LACU. Thus, the different apparatus can be operated tomaximize throughput and processing efficiency.
[0046] Optical Lithography has met the challenge of the semiconductor industry’sincreasing resolution and the tighter overlay requirements by progressively:increasing the optics numerical aperture; shortening the illumination wavelength; and supporting low k-factor processing. This trend continued with the wavelength beingshortened to 13nm for EUV lithography tools, and with numerical apertures increasedto 1.35 for water-based immersion lithography tools.
[0047] Currently, water-based, 193nm, immersion tools are capable of printing at lessthan 40nm (half pitch) resolutions with less than 6nm overlay accuracy. For the nextlithographic nodes, water-based immersion lithography will be used with doublepatterning techniques, and this will pushdown to below the 32nm node. The majorchallenges for the exposure tools are the tightening of the specifications required withdouble pattering, while dealing with shrinking process windows. The specificationsrequirements include increased throughput, tighter overlay, and tighter criticaldimension control.
[0048] Optical lithography has been the mainstay of semiconductor device productionfor the past 30 years. It has kept up with the exacting resolution requirements of thesemiconductor industry roadmap by progressively increasing optical systemnumerical apertures and using progressively shorter exposing illuminationwavelengths.
[0049] Occasional roadblocks have been circumvented by the introduction of newtechniques. An example of this was the introduction of immersion lithography, which,as discussed above allowed the increase of optical system numerical apertures tobeyond the limit of 1.0. Using water as an immersion fluid between the lens and thewafer has allowed the optics system numerical aperture to be increased to 1.35. Thisrepresented the new limit imposed by refractive indices in the imaging layer stack.The maximum numerical aperture is limited to the product of the minimum refractiveindex in the layer stack and the sine of the maximum ray angle. For water-basedimmersion, the limiting refractive indices in the thin film stack are that of the water, at1.44, and the lens’s final element glass, at 1.56. This gives a maximum numericalaperture of 1.35, i.e., 0.94 x 1.44, where 0.94 is the sine of the maximum practicalimaging ray angle (70 degrees). Changing the immersion fluid and the final lenselement glass to increase the minimum refractive index in the layer stack representssignificant technical challenges and cannot be accomplished in the timeframe of therequired lithography roadmap and before the availability of production EUVlithography. The half pitch resolution of an immersion optical system is given by:
Where: Rs is the half pitch resolution; λ is the illumination wavelength; NA is theoptics system numerical aperture; and k is the process factor associated with theconfiguration and partial coherence of the illumination. The minimum value of k is0.25 and is associated with using Dipole Illumination.
[0050] The highest optical half pitch resolution available therefore becomes 36nm forwater-based immersion, numerical aperture 1.35, using polarized dipole illuminationat a wavelength of 193nm. Clearly, for optical lithography to capture 32nm (halfpitch) node lithography and beyond, some further innovation is required. "DoublePatterning" represents such a step and is under development.
[0051] Double patterning can now be grouped into three main processing techniques:Spacer based double patterning; Litho Etch Litho Etch (LELE) based doublepatterning; and Litho Process Litho Etch (LPLE) based double patterning. Oneexample of LPLE is Litho Freeze Litho Etch (LFLE) based double patterning. Indevelopment, all of these processes are giving promising results. The Spacertechnique is particularly applicable to Flash Memory production.
[0052] A basic spacer double patterning sequence consistent with one embodiment ofthe present invention is shown in FIGs. 3-6. FIGs. 3-4 depict the first steps in thespacer sequence, which are to lithographically define a resist pattern (shown in FIG.3) that is then transferred by etch into a sacrificial (as shown in FIG. 4). In FIG. 3, apatterning device 310 is shown above a lithography pattern 320 (resist) atop a bottomanti-reflective coating (bare) layer 330. In an earlier step (not shown), pattern 320was formed by exposing and developing a layer of resist. The rest of the stackcomprises a sacrificial layer 340, hard mask layer 350, electric layer 360, and oxidelayer 370. In one embodiment, sacrificial layer 340 comprises an advanced patterningfilm (APF), from Applied Materials of Santa Clara, CA.
[0053] Consistent with one embodiment of the present invention, FIG. 4 depicts thelithography pattern 320 (not shown in FIG. 4) from FIG. 3 being transferred to thesacrificial layer 340 by etch.
[0054] Consistent with one embodiment of the present invention, FIG. 5 shows thespacer-forming layer 380 being conformally deposited over the etched hard maskpattern 350 and then anisotropically etched back to leave the spacer pattern thatfollows all edges of the initial lithographically defined sacrificial pattern. The initial sacrificial pattern 340 is then etched away (see FIG. 6) to leave the high resolutionspacer pattern.
[0055] This spacer pattern is then subjected to a second lithography stage to etch andto trim away unwanted parts of the spacer patterning, leaving the required highresolution final pattern (not shown). The final defined high resolution spacer pattern isthen etch transferred into a hard mask layer which is used to define the etching of theunderlying polysilicon layer (not shown). A typical resulting scanning electronmicroscope (SEM) profile in polysilicon is shown in FIG. 7.
[0056] This spacer technology has become popular because the high resolution inlinewidth is achieved, not by optical imagery, but by the control of a deposited layerthickness. This avoids increasing the resolution and overlay requirements on theoptical exposure tool. The main requirement on the optical exposure tool becomes notresolution or overlay, but critical dimension uniformity and critical dimension control.The control of the critical dimension impacts the width of the gaps between thedefined spacer linewidths. If the critical linewidth dimensions of the sacrificial patterndefined by the lithography tool are not correct, a bi-modal distribution in themeasured space width develops.
[0057] Consistent with one embodiment of the present invention, a basic Litho EtchLitho Etch (LELE) process sequence is shown in FIGS. 8-11. In LELE, twolithographically defined patterns are interstitially exposed in two processingsequences. As shown in FIG. 8, a patterning device 810 is shown above the stack. Atthe top of the stack is a first lithography pattern 820 (resist) on top of a bare layer 830.The rest of the stack comprises hard mask layer 840, polysilicon layer 850, and finallysilicon dioxide (S1O2) layer 860.
[0058] Consistent with one embodiment of the present invention, FIGs. 8-9 show theprinting of the first lithography pattern 820 into resist and then the transfer to hardmask layer 840 by etch. A 1:1 line space type pattern is overexposed to a 1:3line/space ratio that gives optimum process control and opens the spaces to allowinsertion of a second lithography pattern.
[0059] Consistent with one embodiment of the present invention, FIG. 10 shows theimaging of the second interstitial pattern 870 and its definition in resist 880, which isabove another bare layer 890. The pattern is also overexposed to give a 1:3 line/spaceratio. Next, the second litho pattern is developed to define a resist/barc pattern 1100.Finally, both the first pattern 840, which is defined in the hard mask layer, and the second pattern 1100, which is defined in the resist layer, are transferred by etch into apolysilicon device layer (not shown).
[0060] The SEM profile in FIG. 12 shows typical line profiles that are defined in thepolysilicon. The height difference between the lines is due to the difference in etchingcharacteristics of the hard mask and the resist image defining patterns (hard mask notremoved from first pattern).
[0061] For this technique, the exacting requirements on the exposure tool becomeboth overlay and critical dimension uniformity. Using the “positive” LELE processflow illustrated in FIGs. 8-11, the overlay control defines the dimension uniformity ofthe spacing between lines, which may not be as critical to the device processing as theactual width of the lines that are used to define gate structures. The critical dimensioncontrol for the final polysilicon linewidths is the most important requirement; this isdefined by the exposure tool. If the critical dimensions for the first and secondpatterns are not matched, a bi-modal linewidth distribution can be observed.
[0062] The latest and most exciting development are the LPLE processes. Anexample is the Freeze Process (also known as Litho Freeze Litho Etch, LFLE). LPLEprocesses reduce the number of processing steps in the LELE sequence. The first etchin the LELE process is not required. This implies a potential cost saving and yieldimprovement. The LFLE sequence is shown in FIGs. 13-16.
[0063] Consistent with one embodiment of the present invention, FIG. 13 shows thedefinition of the first lithography pattern similar to the LELE process. FIG. 13 showspatterning device 1310 above the first lithography pattern (made of resist) 1320,which has already been exposed and developed. Resist 1320 is on top of bare layer1330, which is on top of polysilicon layer 1340. At the bottom of the stack is a layerof Si02 1350.
[0064] In the next step, consistent with one embodiment of the present invention, asshown in FIG. 14, instead of etching pattern 1320 into a hard mask, the resistpatterning is frozen in place so that it can be overcoated by the next resist coat for thedefinition of the second pattern in resist without being dissolved away. The frozenresist pattern is depicted as 1320'. The freezing of the resist pattern can beaccomplished in a number of ways; these include: Ion Implant; DUV ExposureHardening; Chemical Hardening, and the like. Chemical hardening promises to be themost economic and convenient.
[0065] In FIG. 15, consistent with one embodiment of the present invention, theprocess continues with the resist overcoating 1360. Consistent with one embodimentof the present invention, FIG. 16 shows the definition of the second pattern 1370 inresist. Both the first 1320' and second images 1370 have been defined in resist, andare ready for etch transfer into the polysilicon 1340. The resulting SEM profile inpolysilicon is show in FIG. 17, according to one embodiment of the present invention.
[0066] The LFLE process offers the same challenges for the exposure tool as does theLELE process. Using the “positive” sequence in which the patterning light exposesspaces, the overlay errors from the imaging appear as variations in the width of thespaces between lines. Poor overlay control will provide a bi-modal distribution in thewidth of the spaces. The critical dimension (CD) control and uniformity of eachseparate exposure step also contributes to a bi-modal distribution in the linewidthvariation. With all the double patterning sequences highlighted, the challenge for theexposure tool becomes tight critical dimension and overlay specifications coupledwith high productivity.
[0067] One major obstacle involved with double patterning techniques is accuratelyaligning the first lithography pattern to the second lithography pattern. In oneembodiment, the first pattern is aligned interstitially with the second pattern, althoughthis is not always the case. To demonstrate these concerns, the LFLE process isdiscussed in more detail below as one example. Referring back to FIGs. 14-16, thefirst lithography pattern 1320' is coated with a second radiation-sensitive layer (resistlayer) 1360 to accommodate second lithography pattern 1370. An alignment markdefined in, for example, the first radiation-sensitive layer 1320, is obliterated,contrast-wise, when overcoated with second radiation-sensitive layer 1360 becausethey have similar optical properties. Therefore, the alignment mark in the resistcannot be seen by the alignment system.
[0068] In FIG. 18, arrow 1810 represents an alignment system illumination beamincident on the second resist layer 1360. Dashed arrows 1820 represent a very weakscattered signal from the buried alignment key. Normally, this would force the use ofan alignment mark defined by a previous processing level (i.e., lower in the alignmentkey stack) for alignment of both the first pattern and subsequently the second pattern.Therefore, the two patterns are not directly aligned to one another, but rather they areindependently aligned through a surrogate. This effectively degrades the alignment accuracy between the patterns. This is already a major problem, and will become evenmore problematic as the line spacing width continues to decrease.
[0069] Consistent with one embodiment of the present invention, one solution to theproblem set forth above is providing a means of highlighting the definition of thepatterned alignment mark (e.g., a diffraction grating, diffraction array, alignmentarray, or other pattern for alignment) in the first pattern of a double patterning process(e.g., LFLE) when the alignment mark is over-coated with resist. To this end, in thedouble patterning process steps a dye compound can be added before, together with,or after the first resist layer is exposed and developed. For example, a dye compoundthat does not appreciably interfere with the resist layer's actinic performance or, in thecase of LFLE, its ability to freeze the image, could be used.
[0070] In one embodiment, the dye compound is a photosensitive compound or aphotochromic material, as discussed in detail below. In one embodiment, the dyecompound may be substantially absorbent or substantially reflective at a desiredwavelength band. In another embodiment, the dye compound may be fluorescent orluminescent at a desired wavelength band. This wavelength band may include thealignment system illumination beam wavelength. In all of these embodiments, adiffraction grating, diffraction array, alignment array, or patterning used for alignmentis formed. This diffraction grating, diffraction array, alignment array, or pattern isdetectable by the alignment system.
[0071] Consistent with one embodiment of the present invention, in FIG. 19, arrow1910 represents an alignment system illumination beam incident on the second resistlayer 1360. In this illustrated embodiment, the first pattern 1320' has been augmentedby a dye compound. Arrows 1920 represent a strong signal (e.g., diffraction orders)from the buried alignment key, which is now visible even though the first pattern isovercoated with the second resist layer 1360. As shown, the dye compound is appliedto the first lithographic pattern 1320’. In another embodiment, a suitable dyecompound may be applied to the second radiation-sensitive layer 1360. In either ofthese embodiments however, the dye compound provides an optical contrast betweena first lithography pattern and a second resist layer that coates it. This contrast formsa diffraction grating, diffraction array, alignment array, or other pattern depending onthe geometry of the pattern of an alignment mark used in the first patterning processof a double patterning process.
[0072] In one embodiment, the dye compound is added to the first resist layer (or firstlithography pattern). The dye compound and the first resist layer (or first lithographypattern) cooperate to form a diffraction grating, diffraction array, alignment array, orother pattern for alignment. In another embodiment, the dye compound is added tothe second resist layer which is coating the first pattern (instead of adding it to thefirst resist layer or first lithographic pattern). In this embodiment, the second resistlayer (overcoating the first pattern) and the dye compound therein cooperate to form adiffraction grating, diffraction array, alignment array, or other pattern for alignment.In either of these embodiments, the diffraction grating, diffraction array, alignmentarray, or other pattern for alignment arises from interspersing the dye compound withareas lacking dye compound. In one embodiment, the dye compound is a photoactivephotosensitive compound or a photochromic material.
[0073] Dyes can be selected to match the alignment system wavelengths. These dyescan be added to the first layer of resist in a double patterning process, or can beapplied to the developed lithographic pattern. In another embodiment, the dyes canbe added to the overcoating layer of a second resist. For use in LFLE, the freezingmaterial can be augmented with dye such that the material simultaneously freezes thefirst lithographic pattern and provides optical contrast to set up a diffraction grating,diffraction array, alignment array, or other pattern for alignment, making the firstpattern itself into an alignment marker. In this manner, the second pattern in a doublepatterning process can be directly aligned to the first lithographic pattern withouthaving to resort to the use of a surrogate alignment marker, thus greatly improvingalignment accuracy in lithography patterning processes such as double patterningprocesses.
[0074] Exemplary alignment system wavelengths in current use are 532 nm, 635 nm,780 nm, and 850 nm; however, other wavelengths are also possible Depending upon aparticular type of light or radiation wavelength used in a lithography system. A dyemay be selected such that it leaves the performance of the resist at the actinicwavelength unaffected and only impacts the resist transparency at the aligningwavelength.
[0075] FIG. 20 shows an exemplary transmission spectrum for photoresist augmentedwith colored dyes. The spectrum indicates that the dyes are substantially absorbent inspecified wavelength bands (which can be selected to correspond to the alignmentwavelengths); however, these dyes are substantially transparent at typical actinic wavelengths. In Figure 20, 2010 is the spectrum for cyan photoresist, 2020, is thespectrum for magenta photoresist, and 2030 is the spectrum for yellow photoresist.
[0076] An exemplary dye is Merocyanine 540, which is heavily absorbing at and near540 nm. The molar extinction coefficient spectrum for Merocyanine 540 is shown inFIG. 21. The chemical structure of Merocyanine 540 is shown below:
[0077] A second exemplary dye is thiatricarbocyanine (also known as C7) dye, whichis heavily absorbing at and near 780 nm. The molar extinction coefficient spectrumfor C7 is shown in FIG. 22. The chemical structure of C7 is shown below:
[0078] Both of these dyes are transparent at typical actinic wavelengths (for examplein the range 220nm to 400 nm). Other dyes with the properties of being absorbing,fluorescing, or luminescent at typical alignment wavelengths are available. Anexemplary dye manufacturer is H.W. Sands Corp., of Jupiter, FL. For example, otherdyes are available that support actinic exposure at 193 nm, 248 nm, 365 nm, 405 nm,and 435 nm, while at the same time are substantially absorbent at typical alignmentsystem wavelengths.
[0079] In one embodiment of the present invention, the dye compound comprises aphotosensitive compound. In another embodiment of the present invention, the dyecompound comprises a photochromic material. Examples of photochromic materialsconsistent with the present invention are spiropyrans, azobenzenes, photochromicquinones, inorganic photochromic materials, or photochromic complexes of organicchromophores attached to metal ions.
[0080] FIG. 23 shows one embodiment of a method of manufacturing asemiconductor device lithographically 2300 consistent with one embodiment of thepresent invention. In block 2310, a substrate is coated with a first radiation sensitive-layer (e.g., resist). In block 2320, a dye compound is added to the first radiationsensitive-layer. In one embodiment, block 2320 (adding a dye compound) occursbefore block 2310 (coating a substrate). In another embodiment, block 2310 (coatinga substrate) occurs before block 2320 (adding a dye compound). In block 2330, thefirst radiation sensitive-layer is exposed and developed to form a first lithographypattern. In one embodiment, block 2330 uses a radiation beam from a lithographicapparatus. In one embodiment, block 2330 (exposure and development) occursbefore block 2320 (adding a dye compound); meaning that the dye compound isadded to the first lithography pattern. In block 2340, the first lithography pattern iscoated with a second radiation-sensitive layer. In block 2350, the location of the firstlithography pattern is detected. In one embodiment, this detection is accomplished byan alignment system beam. In block 2360, the substrate is aligned with the detectedlocation of the first lithography pattern. In block, 2370 the second radiation-sensitivelayer is exposed and developed to form a second lithography pattern. In oneembodiment, block 2370 uses a radiation beam from a lithographic apparatus.Because the substrate is aligned with the first pattern before the second radiation-sensitive layer is exposed, the second lithography pattern is aligned with the firstlithography pattern. In one embodiment, the second lithography pattern is alignedintcrstitially with the first lithography pattern.
[0081] In one embodiment of method 2300, the dye compound and the firstlithography pattern form a diffraction grating, diffraction array, alignment array, orother pattern for alignment. One embodiment of method 2300 further includes theoptional (not shown) step of processing the first lithography pattern before the step2340 of coating the first lithography pattern with a second radiation-sensitive layer.In one embodiment, this optional processing step comprises freezes the firstlithography pattern. In this embodiment, block 2320 (adding a dye compound) can beaccomplished by first adding the dye compound to freezing material before thefreezing material is applied to the first lithography pattern. In this way, the additionof the freezing material not only freezes the pattern, but it also introduces the dyecompound.
[0082] In one embodiment of method 2300, the dye compound is fluorescent orluminescent at a desired wavelength band, which may correspond to an alignmentsystem wavelength. Tn another embodiment, the dye compound is substantiallyabsorbent or substantially reflective at a desired wavelength band, which maycorrespond to an alignment system wavelength. In one embodiment, the dyecompound comprises a photosensitive compound. In another embodiment, the dyecompound comprises a photochromic material. Examples of photochromic materialsconsistent with the present invention are spiropyrans, azobenzenes, photochromicquinones, inorganic photochromic materials, or photochromic complexes of organicchromophores attached to metal ions.
[0083] FIG. 24 shows an alternative method of manufacturing a semiconductordevice lithographically 2400 consistent with one embodiment of the presentinvention. The principal difference between methods 2300 and 2400 is that in method2400, the dye compound is added to the second radiation-sensitive layer, as opposedto the first layer. Therefore, the initial process steps used in traditional doublepatterning methods remain unchanged because the dye compound is added later in thesequence.
[0084] In block 2410, a substrate is coated with a first radiation sensitive-layer (e.g.,resist). In block 2420, the first radiation sensitive-layer is exposed and developed toform a first lithography pattern. In one embodiment, block 2420 uses a radiationbeam from a lithographic apparatus. In block 2430, the first lithography pattern iscoated with a second radiation-sensitive layer. In block 2440, a dye compound isadded to the second radiation sensitive-layer. In block 2450, the location of the firstlithography pattern is detected. In one embodiment, this detection is accomplished byan alignment system beam. In block 2460, the substrate is aligned with the detectedlocation of the first lithography pattern. In block 2470, the second radiation-sensitivelayer is exposed and developed to form a second lithography pattern. In oneembodiment, block 2470 uses a radiation beam from a lithographic apparatus.Because the substrate is aligned with the first pattern before the second radiation-sensitive layer is exposed, the second lithography pattern is aligned with the firstlithography pattern. In one embodiment, the second lithography pattern is alignedinterstitially with the first lithography pattern.
[0085] In one embodiment of method 2400, the dye compound and the secondlithography pattern form a diffraction grating, diffraction array, alignment array, or other pattern for alignment. One embodiment of method 2400 further includes theoptional step (not shown) of processing (for example, freezing) the first lithographypattern before the step 2430 of coating the first lithography pattern with a secondradiation-sensitive layer.
[0086] In one embodiment of method 2400, the dye compound is fluorescent orluminescent at a desired wavelength band, which may correspond to an alignmentsystem wavelength. In another embodiment, the dye compound is substantiallyabsorbent or substantially reflective at a desired wavelength band, which maycorrespond to an alignment system wavelength. In one embodiment, the dyecompound comprises a photosensitive compound. In another embodiment, the dyecompound comprises a photochromic material. Examples of photochromic materialsconsistent with the present invention are spiropyrans, azobenzenes, photochromicquinones, inorganic photochromic materials, or photochromic complexes of organicchromophores attached to metal ions.
[0087] A system for manufacturing a semiconductor device lithographically 2500,consistent with one embodiment of the present invention is shown in FIG. 25. System2500 includes an illumination source 2510 and an alignment system 2520.Illumination source 2510 provides an alignment beam at a specified wavelength forreading an alignment mark in a double patterning process. Alignment system 2520 isconfigured to detect a dye compound in one of a first radiation-sensitive layer coatedon a substrate or in a second radiation-sensitive layer coated on a first lithographypattern in the double patterning process. The dye compound provides a desiredcontrast between the first lithography pattern and the second radiation-sensitive layerwhen aligning two patterning steps of the double patterning process based on thealignment mark formed in the first lithography pattern. In one embodiment, the twopatterning steps are aligned interstitially.
[0088] It is to be appreciated that a dye compound can be used in any doublepatterning process, for example in spacer, LELE, LPLE, or LFLE double patterningprocesses. Referring back to FIGs. 8-11 and FIGs. 13-16, FEFE and FFFE bothinvolve a first lithography pattern that is subsequently over coated with a secondradiation-sensitive layer (e.g., resist). In some embodiments, the first lithographypattern may have an alignment mark that is produced during the processing steps thatcreated the first pattern. Adding a dye compound to either the first lithographypattern (before or after it is developed and exposed, and before or after the substrate is coated) or the second radiation-sensitive layer provides an optical contrast such thatthe dye compound cooperates with the first lithography pattern or the secondlithography layer to form a diffraction grating, diffraction array, alignment array, orother pattern for alignment. Therefore, the second lithography pattern can be directlyaligned to the first lithography pattern very accurately. In some embodiments, thesecond lithography pattern is aligned interstitially with the first lithography pattern.
[0089] Before now, the first pattern was aligned using an alignment marker in apreviously processed layer, thereby introducing an associated error. The secondpattern was then independently aligned to this alignment marker, introducing theassociated error once more. In a worst-case scenario, the errors are large and in thesame direction, thereby limiting the optical resolution which can be achieved.Directly aligning the second pattern to an alignment mark defined together with thefirst pattern eliminates one source of error.
[0090] Although specific reference may be made in this text to the use of lithographicapparatus in the manufacture of ICs, it should be understood that the lithographicapparatus described herein may have other applications, such as the manufacture ofintegrated optical systems, guidance and detection patterns for magnetic domainmemories, flat-panel displays, liquid-crystal displays (LCDs), thin-film magneticheads, etc. The skilled artisan will appreciate that, in the context of such alternativeapplications, any use of the terms "wafer" or "die" herein may be considered assynonymous with the more general terms "substrate" or "target portion", respectively.The substrate referred to herein may be processed, before or after exposure, in forexample a track (a tool that typically applies a layer of resist to a substrate anddevelops the exposed resist), a metrology tool and/or an inspection tool. Whereapplicable, the disclosure herein may be applied to such and other substrateprocessing tools. Further, the substrate may be processed more than once, for examplein order to create a multi-layer IC, so that the term substrate used herein may alsorefer to a substrate that already contains multiple processed layers.
[0091] The terms "radiation" and "beam" used herein encompass all types ofelectromagnetic radiation, including ultraviolet (UV) radiation (e.g. having awavelength of or about 365, 355, 248, 193, 157 or 126 nm) and extreme ultra-violet(EUV) radiation (e.g. having a wavelength in the range of 5-20 nm), as well asparticle beams, such as ion beams or electron beams.
[0092] The term "lens", where the context allows, may refer to any one orcombination of various types of optical components, including refractive, reflective,magnetic, electromagnetic and electrostatic optical components.
[0093] As used herein, the term "dye compound" is to be broadly construed. A "dyecompound" may be any photosensitive compound or any photochromic material. A"dye compound" may also be any compound which is capable of changing relevantoptical properties (for example, but not limited to: absorption, reflection,fluorescence, and/or luminescence) such that a pattern or alignment marker formed ina first layer of radiation-sensitive material is detectable even when it is overcoatedwith a second layer of radiation-sensitive material having similar optical properties tothe un-dyed first layer.
[0094] The descriptions above are intended to be illustrative, not limiting. Thus, itwill be apparent to one skilled in the art that modifications may be made to theinvention as described without departing from the scope of the clauses set out below.Other aspects of the invention are set out as in the following numbered clauses: 1. A method of manufacturing a semiconductor device lithographically, the methodcomprising : (a) coating a substrate with a first radiation sensitive-layer; (b) adding a dye compound to the first radiation-sensitive layer; (c) exposing and developing the first radiation-sensitive layer to form afirst lithography pattern; (d) coating the first lithography pattern with a second radiation-sensitivelayer; (e) detecting the location of the first lithography pattern; (f) aligning the substrate with the detected location of the first lithographypattern; and (g) exposing and developing the second radiation-sensitive layer to form asecond lithography pattern; (h) wherein the second lithography pattern is aligned with the firstlithography pattern.
2. The method of manufacturing according to clause 1, further comprising: (a) aligning the second lithography pattern interstitially with the first lithographypattern.
3. The method of manufacturing according to clause 1, further comprising: (a) forming a diffraction grating, diffraction array, alignment array, or otherpattern for alignment from the dye compound and the first lithography pattern.
4. The method of manufacturing according to clause 1, wherein adding a dye compoundoccurs before coating the substrate.
5. The method of manufacturing according to clause 1, wherein adding the dyecompound occurs after coating the substrate and before exposing and developing thefirst radiation-sensitive layer.
6. The method of manufacturing according to clause 1, wherein adding the dyecompound occurs after exposing and developing the first radiation-sensitive layer.
7. The method of manufacturing according to clause 1, further comprising: (a) processing the first lithography pattern before coating the first lithographypattern with the second radiation-sensitive layer.
8. The method of manufacturing according to clause 1, wherein the dye compound isfluorescent or luminescent at a desired wavelength band.
9. The method of manufacturing according to clause 1, wherein the dye compound issubstantially absorbent or substantially reflective at a desired wavelength band.
10. The method of manufacturing according to clause 1, wherein the dye compoundcomprises one of a photosensitive compound, a photochromic material, or aphotochromic material that comprises a spiropyrans, azobenzenes, photochromicquinones, inorganic photochromic materials, or photochromic complexes of organicchromophorcs attached to metal ions.
11. A method of manufacturing a semiconductor device lithographically, the comprising: (a) coating a substrate with a first radiation sensitive-layer; (b) exposing and developing the first radiation-sensitive layer to form a firstlithography pattern; (c) coating the first lithography pattern with a second radiation-sensitive layer; (d) adding a dye compound to the second radiation-sensitive layer; (e) detecting the location of the first lithography pattern; (f) aligning the substrate with the detected location of the first lithographypattern; and (g) exposing and developing the second radiation-sensitive layer to form a secondlithography pattern; (h) wherein the second lithography pattern is aligned with the first lithographypattern.
12. The method of manufacturing according to clause 11, further comprising: (a) aligning the second lithography pattern interstitially with the first lithographypattern.
13. The method of manufacturing according to clause 11, farther comprising: (a) forming a diffraction grating, diffraction array, alignment array, or otherpattern for alignment from the dye compound and the second lithographypattern.
14. The method of manufacturing according to clause 11, farther comprising: (a) processing the first lithography pattern before coating the first lithographypattern with the second radiation-sensitive layer.
15. The method of manufacturing according to clause 11, wherein the dye compound isone of fluorescent or luminescent at a desired wavelength band or substantiallyabsorbent or substantially reflective at the desired wavelength band.
16. The method of manufacturing according to clause 11, wherein the dye compoundcomprises one of a photosensitive compound, a photochromic material, or aphotochromic material that comprises a spiropyrans, azobenzenes, photochromicquinones, inorganic photochromic materials, or photochromic complexes of organicchromophores attached to metal ions.
17. An article of manufacture, comprising: (a) a substrate coated with a first radiation-sensitive layer; (b) a first lithography pattern formed in the first radiation-sensitive layer; (c) a second radiation-sensitive layer coating the first radiation-sensitive layer; (d) wherein either the first lithography pattern or the second radiation-sensitivelayer includes a dye compound; and (e) wherein the dye compound cooperates with either the first lithography patternor the second radiation-sensitive layer to form a diffraction grating,diffraction array, alignment array, or other pattern for alignment.
18. The article of manufacture according to clause 17, wherein the second radiation-sensitive layer includes a second lithography pattern directly aligned to the firstlithography pattern using the diffraction grating, diffraction array, alignment array, orother pattern for alignment.
19. The article of manufacture according to clause 18, wherein said second lithographypattern is aligned intcrstitially with the first lithography pattern.
20. A system for manufacturing a semiconductor device lithographically, the systemcomprising: (a) an illumination source to provide an alignment beam at a specified wavelengthfor reading an alignment mark in a double patterning process; and (b) an alignment system configured to detect a dye compound in one of a firstradiation-sensitive layer coated on a substrate or in a second radiation-sensitive layer coated on a first lithography pattern in the double patterningprocess; (c) wherein the dye compound provides a desired contrast between the firstlithography pattern and the second radiation-sensitive layer when aligning twopatterning steps of the double patterning process based on the alignment markformed in the first lithography pattern.
21. The system according to clause 20, wherein the second lithography pattern is alignedinterstitially with the first lithography pattern.

权利要求:
Claims (1)
[1]
A lithographic device comprising: an illumination device adapted to provide a radiation beam, a support constructed to support a patterning device, which patterning device is capable of applying a pattern in a cross-section of radiation beam to form a patterned radiation beam; constructed to support a substrate; and a projection device adapted to project the patterned radiation beam onto a target area of the substrate, characterized in that the substrate table is adapted to position the target area of the substrate in a focal plane of the projection device.

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法律状态:
2011-01-05| WDAP| Patent application withdrawn|Effective date: 20101223 |

优先权:

申请号 | 申请日 | 专利标题

US16191509P| true| 2009-03-20|2009-03-20|

US16191509|2009-03-20|

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